Invention Grant
- Patent Title: Semiconductor storage device
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Application No.: US15492147Application Date: 2017-04-20
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Publication No.: US10373675B2Publication Date: 2019-08-06
- Inventor: Yoshisato Yokoyama , Yuichiro Ishii
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2014-223183 20141031
- Main IPC: G11C11/418
- IPC: G11C11/418 ; G11C11/417 ; G11C5/14

Abstract:
A semiconductor storage device includes, a memory array, a plurality of memory cells provided in rows and columns, and a control circuit for controlling the memory array, each of the memory cells being a static-type memory cell comprising driving transistors, transfer transistors, and load elements.
Public/Granted literature
- US20170221549A1 SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2017-08-03
Information query
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