Invention Grant
- Patent Title: DRAM device with embedded flash memory for redundancy and fabrication method thereof
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Application No.: US15868955Application Date: 2018-01-11
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Publication No.: US10373683B2Publication Date: 2019-08-06
- Inventor: Yukihiro Nagai
- Applicant: UNITED MICROELECTRONICS CORP. , Fujian Jinhua Integrated Circuit Co., Ltd.
- Applicant Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee: UNITED MICROELECTRONICS CORP.,Fujian Jinhua Integrated Circuit Co., Ltd.
- Current Assignee Address: TW Hsin-Chu CN Quanzhou, Fujian Province
- Agent Winston Hsu
- Priority: CN201710201701 20170330
- Main IPC: H01L21/311
- IPC: H01L21/311 ; H01L21/3213 ; H01L21/28 ; H01L29/49 ; G11C14/00 ; H01L27/108 ; H01L29/66 ; H01L29/792 ; G11C29/00 ; H01L27/11573 ; G11C16/04 ; H01L29/51 ; G11C11/401
Abstract:
A DRAM device with embedded flash memory for redundancy is disclosed. The DRAM device includes a substrate having a DRAM array area and a peripheral area. The peripheral area includes an embedded flash forming region and a first transistor forming region. DRAM cells are disposed within the DRAM array area. Flash memory is disposed in the embedded flash forming region. The flash memory includes an ONO storage structure and a flash memory gate structure. A first transistor is disposed in the first transistor forming region.
Public/Granted literature
- US20180286481A1 DRAM DEVICE WITH EMBEDDED FLASH MEMORY FOR REDUNDANCY AND FABRICATION METHOD THEREOF Public/Granted day:2018-10-04
Information query
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