Invention Grant
- Patent Title: Systems and methods for single magnetron sputtering
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Application No.: US14809084Application Date: 2015-07-24
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Publication No.: US10373811B2Publication Date: 2019-08-06
- Inventor: David Christie , Skip B. Larson
- Applicant: Advanced Energy Industries, Inc.
- Applicant Address: SG Singapore
- Assignee: AES GLOBAL HOLDINGS, PTE. LTD
- Current Assignee: AES GLOBAL HOLDINGS, PTE. LTD
- Current Assignee Address: SG Singapore
- Agency: Neugeboren O'Dowd PC
- Main IPC: C23C14/34
- IPC: C23C14/34 ; H01J37/34

Abstract:
A system and method for single magnetron sputtering are described. One example includes a system having a power supply, a plasma chamber enclosing a substrate, an anode, and a target for depositing a thin film material on the substrate. This example also has a datastore with uncoated anode characterization data and an anode sputtering adjustment system including an anode analysis component to generate a first health value. The first health value is indicative of whether the anode is coated with a dielectric material. This example also has an anode power controller to receive the first health value and provide an anode-energy-control signal to the pulse controller of the pulsed DC power supply to adjust a second anode sputtering energy relative to a first anode sputtering energy to eject at least a portion of the dielectric material from the anode.
Public/Granted literature
- US20170022604A1 SYSTEMS AND METHODS FOR SINGLE MAGNETRON SPUTTERING Public/Granted day:2017-01-26
Information query
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