Invention Grant
- Patent Title: Substrate processing method
-
Application No.: US15531734Application Date: 2015-12-07
-
Publication No.: US10373821B2Publication Date: 2019-08-06
- Inventor: Seung Chul Shin , Jin Hyuk Yoo , Min Ho Cheon , Chul-Joo Hwang
- Applicant: JUSUNG ENGINEERING CO., LTD.
- Applicant Address: KR
- Assignee: JUSUNG ENGINEERING CO., LTD.
- Current Assignee: JUSUNG ENGINEERING CO., LTD.
- Current Assignee Address: KR
- Agency: Renaissance IP Law Group LLP
- Priority: KR10-2014-0174674 20141208
- International Application: PCT/KR2015/013286 WO 20151207
- International Announcement: WO2016/093564 WO 20160616
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/205 ; H01J37/32 ; C23C16/40 ; C23C16/44 ; C23C16/52 ; C23C16/56
Abstract:
Disclosed is a substrate processing method including gas injection including a source material containing silicon towards substrates received in a reaction chamber, depositing the source material on the substrates by generating plasma including oxygen radicals so as to form deposition films, and executing surface treatment of the deposition films by injecting plasma gas including oxygen radicals.
Public/Granted literature
- US20170345647A1 SUBSTRATE PROCESSING METHOD Public/Granted day:2017-11-30
Information query
IPC分类:
