A method is provided for fabricating a metal interconnect structure. The method includes forming a reticle having a metal line pattern region and at least a scattering bar by an optical proximity correction process; and providing a semiconductor substrate having a first dielectric layer and at least one conductive via. The method also includes aligning the reticle with the semiconductor substrate with the conductive via to align the scattering bar next to the conductive via; and forming metal line patterns on the first dielectric layer and a top surface of the conductive via to completely cover the conducive via.