Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US14809112Application Date: 2015-07-24
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Publication No.: US10373865B2Publication Date: 2019-08-06
- Inventor: Ming-Hui Yang , Chun-Ting Liao , Chen-Yuan Chen , Ho-Chun Liou , Yi-Te Chen
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
- Current Assignee Address: TW Hsin-Chu
- Agency: Cooper Legal Group, LLC
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L21/768 ; H01L23/00 ; H01L23/552 ; H01L23/66 ; H01L25/065

Abstract:
A semiconductor device includes an integrated circuit and a guard ring. The integrated circuit includes a first circuit and a second circuit separated from the first circuit. The guard ring is disposed around the first circuit and between the first circuit and the second circuit. The guard ring includes an outer ring, an inner ring, and two connectors. The outer ring is disposed around the first circuit and has a first gap. The inner ring is disposed between the outer ring and the first circuit and has a second gap. The two connectors connect the outer ring and the inner ring. The outer ring, the inner ring, and the two connectors form a closed loop.
Public/Granted literature
- US20170025367A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2017-01-26
Information query
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