Invention Grant
- Patent Title: Method of separating a back layer on a substrate using exposure to reduced temperature and related apparatus
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Application No.: US15938115Application Date: 2018-03-28
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Publication No.: US10373869B2Publication Date: 2019-08-06
- Inventor: Gordon M. Grivna , Hou Nion Chan
- Applicant: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Applicant Address: US AZ Phoenix
- Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee: SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Current Assignee Address: US AZ Phoenix
- Agent Kevin B. Jackson
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/683 ; H01L21/324

Abstract:
A method of processing a substrate includes providing a substrate having die formed as part of the substrate and separated from each other by spaces, wherein the substrate has first and second opposing major surfaces, and wherein a layer of material is formed atop the second major surface. The method includes placing the substrate onto a carrier substrate and removing portions of the substrate through the spaces to form gaps between adjoining die. The gaps extend at least partially through the substrate towards the second major surface. The method includes exposing the layer of material to a reduced temperature while the substrate is constrained in a first direction between a plate structure and a support structure, wherein the exposing step expands the gaps between the adjoining die in a second direction to separate at least portions of the layer of material. The method provides a reliable and efficient way to bulk separate at least the layer of material.
Public/Granted literature
Information query
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