Invention Grant
- Patent Title: Method of separating semiconductor dies from a semiconductor substrate, semiconductor substrate assembly and semiconductor die assembly
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Application No.: US15968312Application Date: 2018-05-01
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Publication No.: US10373871B2Publication Date: 2019-08-06
- Inventor: Markus Brunnbauer , Franco Mariani
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Priority: DE102016109693 20160525
- Main IPC: H01L21/78
- IPC: H01L21/78 ; H01L21/304 ; H01L21/306 ; H01L21/308 ; H01L21/683 ; H01L23/544
Abstract:
Separation grooves are etched from a main surface into a semiconductor substrate. The separation grooves separate chip regions in horizontal directions parallel to the main surface. At least some of the separation grooves are spaced from a lateral outer surface of the semiconductor substrate by at most a first distance. An indentation is formed along a lateral surface. The indentation extends from the main surface into the semiconductor substrate. A minimum horizontal indentation width of the indentation is equal to or greater than the first distance. A with respect to the main surface vertical extension of the indentation is equal to or greater than a vertical extension of the separation grooves.
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