A method for forming contacts on a semiconductor device includes forming trenches by etching an etch stop layer formed on an interlayer dielectric and etching the interlayer dielectric to expose source and drain regions between gate structures and depositing conductive material in the trenches and over the etch stop layer to a height above the etch stop layer. A resist is patterned on the conductive material with shapes over selected source and drain regions. The conductive material is subtractively etched to remove the conductive material from over the etch stop layer and to recess the conductive material into the trenches without the shapes to form self-aligned contacts below the shapes and lines in the trenches.