Invention Grant
- Patent Title: Embedded bridge with through-silicon vias
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Application No.: US15640406Application Date: 2017-06-30
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Publication No.: US10373893B2Publication Date: 2019-08-06
- Inventor: Aditya S. Vaidya , Ravindranath V. Mahajan , Digvijay A. Raorane , Paul R. Start
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Green, Howard & Mughal LLP.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L21/768 ; H01L23/498 ; H01L23/00 ; H01L25/16

Abstract:
An integrated circuit (IC) package including a substrate comprising a dielectric, and at least one bridge die embedded in the first dielectric. The embedded bridge die comprises a plurality of through-vias extending from a first side to a second side and a first plurality of pads on the first side and a second plurality of pads on the second side. The first plurality of pads are interconnected to the second plurality of pads by the plurality of through-vias extending vertically through the bridge die. The second plurality of pads is coupled to a buried conductive layer in the substrate by solder joints or by an adhesive conductive film between the second plurality of pads of the bridge die and conductive structures in the buried conductive layer, and wherein the adhesive conductive film is over a second dielectric layer on the bridge die.
Public/Granted literature
- US20190006264A1 EMBEDDED BRIDGE WITH THROUGH-SILICON VIAS Public/Granted day:2019-01-03
Information query
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