Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
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Application No.: US15447149Application Date: 2017-03-02
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Publication No.: US10373898B2Publication Date: 2019-08-06
- Inventor: Yuji Iwai , Katsumi Miyawaki
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2016-128977 20160629
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/552 ; H01L23/00
Abstract:
A semiconductor device includes a lead frame comprising a first terminal and a second terminal for grounding, a sealing resin which covers the lead frame, an exposed part which is a part of the second terminal and is exposed from the sealing resin and a conductive material which covers the surface of the sealing resin and contacts the second terminal at the exposed part.
Public/Granted literature
- US20180005926A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2018-01-04
Information query
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