Invention Grant
- Patent Title: Tin-zinc microbump structures and method of making same
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Application No.: US15806231Application Date: 2017-11-07
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Publication No.: US10373900B2Publication Date: 2019-08-06
- Inventor: Sri Chaitra J. Chavali , Amanda E. Schuckman , Kyu Oh Lee
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt, P.C.
- Main IPC: H01L21/48
- IPC: H01L21/48 ; H01L23/00 ; H01L23/498

Abstract:
Techniques and mechanisms for providing effective connectivity with surface level microbumps on an integrated circuit package substrate. In an embodiment, different metals are variously electroplated to form a microbump which extends through a surface-level dielectric of a substrate to a seed layer including copper. The microbump includes a combination of tin and zinc that mitigates precipitation of residual copper by promoting the formation of miconstituents in the microbump. In another embodiment, the microbump has a mass fraction of zinc, or a mass fraction of tin, that is different in various regions along a height of the microbump.
Public/Granted literature
- US20180076119A1 TIN-ZINC MICROBUMP STRUCTURES AND METHOD OF MAKING SAME Public/Granted day:2018-03-15
Information query
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