Invention Grant
- Patent Title: Power gate circuits for semiconductor devices
-
Application No.: US15628343Application Date: 2017-06-20
-
Publication No.: US10373921B2Publication Date: 2019-08-06
- Inventor: Yasushi Matsubara
- Applicant: MICRON TECHNOLOGY, INC.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/64 ; H01L23/00 ; H01L25/07 ; H01L25/18 ; H02M7/00 ; G11C5/14 ; G11C11/4074 ; G11C11/4072 ; G11C11/408

Abstract:
Apparatuses and methods for gate power to circuits of semiconductor devices are described. An example apparatus includes a substrate, a first wiring and a second wiring, and a plurality of transistors. The first wiring may be supplied with a power voltage, and the first wiring is formed over the substrate and is elongating in a first direction. The second wiring may be formed between the substrate and the first wiring, and vertically overlapping the first wiring with the second wiring elongating in the first direction. The plurality of transistors are vertically coupled between the first wiring and the second wiring.
Public/Granted literature
- US20180366422A1 POWER GATE CIRCUITS FOR SEMICONDUCTOR DEVICES Public/Granted day:2018-12-20
Information query
IPC分类: