Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
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Application No.: US15905570Application Date: 2018-02-26
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Publication No.: US10373929B2Publication Date: 2019-08-06
- Inventor: Yoichiro Kurita
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Kim & Stewart LLP
- Priority: JP2017-178297 20170915
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/538 ; H01L25/065 ; H01L21/56 ; H01L21/02

Abstract:
A method of manufacturing a semiconductor device includes forming an insulation layer on a support body, selectively forming openings through the insulation layer, forming a conductor pattern in the openings, and above selected portions of, the insulation layer, mounting a first semiconductor element on the insulation layer and electrically connecting the first semiconductor element to the conductor pattern, forming a resin over the first semiconductor element and the insulation layer, removing the support body after the resin is formed to expose a surface of a portion of the conductor pattern, etching the exposed surface of the portion of the conductor pattern to form a recess over the portion of the conductor pattern, and forming a pad containing a metal different than the metal of the conductor pattern in the recess in contact with the conductor pattern.
Public/Granted literature
- US20190088619A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2019-03-21
Information query
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