Invention Grant
- Patent Title: Method for fabricating a local interconnect in a semiconductor device
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Application No.: US15986312Application Date: 2018-05-22
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Publication No.: US10373963B2Publication Date: 2019-08-06
- Inventor: Jui-Yao Lai , Sai-Hooi Yeong , Yen-Ming Chen , Ying-Yan Chen , Jeng-Ya David Yeh
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: McDermott Will & Emery LLP
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L27/11 ; H01L21/02 ; H01L21/3105 ; H01L21/8234 ; H01L23/535 ; H01L27/088 ; H01L29/66 ; H01L29/78 ; H01L29/417
Abstract:
A semiconductor device comprises a first gate electrode disposed on a substrate, a first source/drain region, and a local interconnect connecting the first gate electrode and the first source/drain region. The local interconnect is disposed between the substrate and a first metal wiring layer in which a power supply line is disposed. The local interconnect has a key hole shape in a plan view, and has a head portion, a neck portion and a body portion connected to the head portion via the neck portion. The neck portion is disposed over the first gate electrode and the body portion is disposed over the first source/drain region.
Public/Granted literature
- US20180269213A1 METHOD FOR FABRICATING A LOCAL INTERCONNECT IN A SEMICONDUCTOR DEVICE Public/Granted day:2018-09-20
Information query
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