Invention Grant
- Patent Title: Method of manufacturing semiconductor device including pixel electrode containing indium, zinc, and metal element
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Application No.: US15494833Application Date: 2017-04-24
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Publication No.: US10373980B2Publication Date: 2019-08-06
- Inventor: Hiroyuki Miyake , Shunpei Yamazaki
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office
- Agent Eric J. Robinson
- Priority: JP2013-099915 20130510
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L27/32 ; G02F1/1333 ; G02F1/1343 ; G02F1/1362 ; G02F1/1368 ; H01L29/786

Abstract:
To provide a display device including a transistor that includes an oxide semiconductor and has favorable characteristics, a pixel electrode electrically connected to the transistor, and a capacitor electrically connected to the pixel electrode. To provide a display device that can be manufactured at low cost. The display device includes a display element including a pixel electrode, a transistor that performs switching of the display element and includes a first oxide semiconductor layer serving as a channel formation region, a capacitor that is electrically connected to the display element and includes a dielectric layer between a pair of electrodes. The pixel electrode is a second oxide semiconductor layer formed on the same surface as that on which the first oxide semiconductor layer is formed, and also serves as one electrode of the capacitor.
Public/Granted literature
- US20170229488A1 DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE DISPLAY DEVICE Public/Granted day:2017-08-10
Information query
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