Invention Grant
- Patent Title: Memory including a selector switch on a variable resistance memory cell
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Application No.: US15918770Application Date: 2018-03-12
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Publication No.: US10374007B2Publication Date: 2019-08-06
- Inventor: Andrea Redaelli , Agostino Pirovano
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Holland & Hart LLP
- Priority: WOPCT/IT2009/000537 20091130
- Main IPC: H01L27/24
- IPC: H01L27/24 ; G11C13/00 ; H01L45/00 ; H01L27/28
Abstract:
Embodiments include but are not limited to apparatuses and systems including memory having a memory cell including a variable resistance memory layer, and a selector switch in direct contact with the memory cell, and configured to facilitate access to the memory cell. Other embodiments may be described and claimed.
Public/Granted literature
- US20180277599A1 MEMORY INCLUDING A SELECTOR SWITCH ON A VARIABLE RESISTANCE MEMORY CELL Public/Granted day:2018-09-27
Information query
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