Techniques for forming VFET bottom source and drain epitaxy with anchors are provided. In one aspect, a method of forming a VFET device includes: patterning at least one fin in a substrate; forming anchors on opposite ends of the at least one fin; laterally etching a base of the at least one fin, wherein the anchors prevent the lateral etching from being performed on the ends of the at least one fin; forming bottom source and drains at the base of the at least one fin between the anchors; removing the anchors; forming bottom spacers on the bottom source and drains; forming gates above the bottom spacers alongside the at least one fin; forming top spacers above the gates; and forming top source and drains above the top spacers at a top of the at least one fin. VFET devices are also provided.