Invention Grant
- Patent Title: Electronic devices with nanorings, and methods of manufacture thereof
-
Application No.: US14856971Application Date: 2015-09-17
-
Publication No.: US10374127B2Publication Date: 2019-08-06
- Inventor: Nirmal David Theodore
- Applicant: Freescale Semiconductor, Inc.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H01L31/18
- IPC: H01L31/18 ; H01L33/00 ; H01L33/32 ; H01L33/20 ; H01L31/0304 ; H01L31/0352
Abstract:
Systems and methods for electronic devices are presented. A device includes a substrate. An Indium Gallium Nitride (InGaN) nanoring is formed over the substrate. The InGaN nanoring includes an alloy of Indium Nitride (InN) and Gallium Nitride (GaN). The alloy includes at least 6 percent Indium. A GaN layer may be formed over the InGaN nanoring, and a first electrode is formed over the GaN layer. In one embodiment, the alloy includes less than about 70 percent Indium.
Public/Granted literature
- US20170084786A1 ELECTRONIC DEVICES WITH NANORINGS, AND METHODS OF MANUFACTURE THEREOF Public/Granted day:2017-03-23
Information query
IPC分类:
