Invention Grant
- Patent Title: Magnetic memory device
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Application No.: US15905271Application Date: 2018-02-26
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Publication No.: US10374150B2Publication Date: 2019-08-06
- Inventor: Yushi Kato , Yoshiaki Saito , Soichi Oikawa , Mizue Ishikawa , Hiroaki Yoda
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2017-118780 20170616
- Main IPC: G11C11/00
- IPC: G11C11/00 ; H01L43/08 ; G11C11/16 ; H01L27/22 ; H01L43/10

Abstract:
According to one embodiment, a magnetic memory device includes a conductive layer, first and second magnetic layers, a first nonmagnetic layer and a controller. The conductive layer includes first and second portions, and a third portion positioned between the first and second portions. The conductive layer includes a first metal. The first magnetic layer is separated from the third portion. The second magnetic layer is provided between the third portion and the first magnetic layer. The first nonmagnetic layer is provided between the first and second magnetic layers. The controller is electrically connected to the first and second portions. The second magnetic layer has first and second lattice lengths. The first lattice length is longer than the second lattice length. The controller implements a first operation of supplying a first current to the conductive layer, and a second operation of supplying a second current to the conductive layer.
Public/Granted literature
- US20180366639A1 MAGNETIC MEMORY DEVICE Public/Granted day:2018-12-20
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