Invention Grant
- Patent Title: Optoelectronics integration by transfer process
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Application No.: US15280420Application Date: 2016-09-29
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Publication No.: US10374159B2Publication Date: 2019-08-06
- Inventor: Jeehwan Kim , Ning Li , Devendra K. Sadana , Tze-bin Song
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Erik Johnson
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L51/52 ; H01L51/56 ; H01L51/50

Abstract:
A method for fabricating an optoelectronic device includes forming an adhesion layer on a substrate, forming a material layer on the adhesion layer and applying release tape to the material layer. The substrate is removed at the adhesion layer by mechanically yielding the adhesion layer. A conductive layer is applied to the material layer on a side opposite the release tape to form a transfer substrate. The transfer substrate is transferred to a target substrate to join the target substrate to the conductive layer of the transfer substrate. The release tape is removed from the material layer to form a top emission optoelectronic device.
Public/Granted literature
- US20170018715A1 OPTOELECTRONICS INTEGRATION BY TRANSFER PROCESS Public/Granted day:2017-01-19
Information query
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