Invention Grant
- Patent Title: Intermetallic contact for carbon nanotube FETs
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Application No.: US15803074Application Date: 2017-11-03
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Publication No.: US10374163B2Publication Date: 2019-08-06
- Inventor: Matthew W. Copel , Damon B. Farmer , Talia S. Gershon , Paul M. Solomon
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L51/00
- IPC: H01L51/00 ; H01L51/05 ; H01L51/10

Abstract:
A field effect transistor includes a carbon nanotube layer formed adjacent to a gate structure. Two intermetallic contacts are formed on the carbon nanotube layer. The two intermetallic contacts include an oxidation resistant compound having a work function below about 4.4 electron-volts.
Public/Granted literature
- US20180198071A1 INTERMETALLIC CONTACT FOR CARBON NANOTUBE FETS Public/Granted day:2018-07-12
Information query
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