Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15649824Application Date: 2017-07-14
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Publication No.: US10374594B2Publication Date: 2019-08-06
- Inventor: Shunichi Kaeriyama
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2014-190819 20140919
- Main IPC: H03K17/60
- IPC: H03K17/60 ; H03K17/082 ; H03K17/08

Abstract:
The semiconductor device according to one embodiment includes a power transistor and a sense transistor connected in parallel with each other, a first operational amplifier having a non-inverting input terminal connected to an emitter of the sense transistor and an inverting input terminal connected to an emitter of the power transistor, a resistor element having one end connected to the emitter of the sense transistor and another end connected to a first node, and an adjustment transistor placed between the first node and a low-voltage power supply. The first operational amplifier adjusts a current flowing through the adjustment transistor so that an emitter voltage of the power transistor and an emitter voltage of the sense transistor are substantially the same.
Public/Granted literature
- US20170317669A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-11-02
Information query
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