Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US15480920Application Date: 2017-04-06
-
Publication No.: US10375817B2Publication Date: 2019-08-06
- Inventor: Norikazu Motohashi , Tomohiro Nishiyama , Tadashi Shimizu , Shinji Nishizono
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2016-081941 20160415
- Main IPC: H05K1/02
- IPC: H05K1/02 ; H05K1/11 ; H05K5/00 ; H05K9/00

Abstract:
An electronic device has a control board having a plurality of wiring layers, a metal-made housing supporting the control board, and a fixing screw for fixing the control board to the housing through a washer. The control board includes a through hole penetrating from a third surface to a fourth surface, a through electrode formed inside the through hole, and a power system GND pattern formed on any wiring layer of the wiring layers. The power system GND pattern and the housing are electrically coupled through the through electrode, the washer, and the fixing screw.
Public/Granted literature
- US20170303389A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-10-19
Information query