Disclosed is a sputtering apparatus having a target (2) disposed offset with respect to a substrate (7), wherein the uniformity of a deposition amount can be ensured even when a substrate support holder (6) has a low number of rotations of several rotations to several tens of rotations and the amount of deposition is extremely small to provide such a film thickness of 1 nm or less.A control unit (11) is provided to control a rotational velocity V (rps) of the substrate support holder (6) to satisfy: V·T=N+α by inputting the value of a deposition time T and the values of a total whole number of rotations N and a fractional number of rotations α which are expressed as: X=N+α (where, N is the total whole number of rotations which is a positive whole number, and α is the fractional number of rotations which is a positive pure decimal) when the total number of rotations of the substrate support holder (6) is X during the deposition time T (seconds) of sputtering particles onto a film forming surface of the substrate (7).