Invention Grant
- Patent Title: Method of depositing a thin film
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Application No.: US15816430Application Date: 2017-11-17
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Publication No.: US10381217B2Publication Date: 2019-08-13
- Inventor: Byung Chul Cho , Sang Jin Lee , In Hwan Yi , Kwang Seon Jin
- Applicant: WONIK IPS CO., LTD.
- Applicant Address: KR Pyeongtaek-si, Gyeonnggi
- Assignee: WONIK IPS CO., LTD.
- Current Assignee: WONIK IPS CO., LTD.
- Current Assignee Address: KR Pyeongtaek-si, Gyeonnggi
- Agency: William Park & Associates Ltd.
- Priority: KR10-2016-0167401 20161209
- Main IPC: H01L21/02
- IPC: H01L21/02 ; C23C16/455 ; C23C16/04 ; H01L21/32
Abstract:
In a method of deposition a thin film, a substrate having a pattern may be provided. A surface of the substrate may be treated using a deposition-suppressing gas to form a deposition-suppressing layer on the pattern. A process gas may be applied to the pattern to deposit the thin film. The deposition-suppressing gas may include fluorine.
Public/Granted literature
- US20180166270A1 METHOD OF DEPOSITING A THIN FILM Public/Granted day:2018-06-14
Information query
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