Invention Grant
- Patent Title: Method and apparatus for substrate processing
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Application No.: US15851871Application Date: 2017-12-22
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Publication No.: US10381233B2Publication Date: 2019-08-13
- Inventor: Koji Kagawa , Syuhei Yonezawa , Kazuya Dobashi , Toshihide Takashima , Masaru Amai
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Amin, Turocy & Watson LLP
- Priority: JP2016-251576 20161226; JP2017-077832 20170410; JP2017-152499 20170807
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/308 ; H01L21/67 ; H01L21/311 ; H01L21/3213
Abstract:
A substrate processing method according to exemplary embodiments includes bringing removal solution obtained by mixing a nitric acid, a strong acid stronger than the nitric acid, and water into contact with a substrate in which a boron monofilm is formed on a film including a silicon-based film so as to remove the boron monofilm from the substrate.
Public/Granted literature
- US20180182638A1 METHOD AND APPARATUS FOR SUBSTRATE PROCESSING Public/Granted day:2018-06-28
Information query
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