Invention Grant
- Patent Title: Core material, semiconductor package, and forming method of bump electrode
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Application No.: US15832905Application Date: 2017-12-06
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Publication No.: US10381319B2Publication Date: 2019-08-13
- Inventor: Tomoaki Nishino , Shigeki Kondo , Takahiro Hattori , Hiroyoshi Kawasaki , Takahiro Roppongi , Daisuke Soma , Isamu Sato
- Applicant: Senju Metal Industry Co., Ltd.
- Applicant Address: JP Tokyo
- Assignee: Senju Metal Industry Co., Ltd.
- Current Assignee: Senju Metal Industry Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: The Webb Law Firm
- Priority: JP2016-237468 20161207
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; B23K35/26 ; C22C12/00 ; C22C13/02 ; H05K3/34 ; B23K1/00 ; B23K35/02 ; C25D3/60 ; C25D5/10 ; C25D5/12 ; C25D7/00 ; B23K101/40 ; B22F1/00 ; B22F1/02 ; C22C5/00 ; C22C9/00
Abstract:
A core material including a core and a solder plating layer of a (Sn—Bi)-based solder alloy made of Sn and Bi on a surface of the core. Bi in the solder plating layer is distributed in the solder plating layer at a concentration ratio in a predetermined range of, for example, 91.7% to 106.7%. Bi in the solder plating layer is homogeneous, and thus, a Bi concentration ratio is in a predetermined range over the entire solder plating layer including an inner circumference side and an outer circumference side in the solder plating layer.
Public/Granted literature
- US20180174991A1 Core Material, Semiconductor Package, and Forming Method of Bump Electrode Public/Granted day:2018-06-21
Information query
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