Invention Grant
- Patent Title: Capacitor
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Application No.: US15830810Application Date: 2017-12-04
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Publication No.: US10381337B2Publication Date: 2019-08-13
- Inventor: Hyun Ho Shin , Woong Do Jung , Jong Suk Han , Dong Sik Yoo , Jeong Hoon Ryou , No Il Park , Seung Mo Lim , Il Ro Lee
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Morgan Lewis & Bockius LLP
- Priority: KR10-2017-0068466 20170601
- Main IPC: H01L27/01
- IPC: H01L27/01 ; H01L23/00 ; H01L49/02 ; H05K1/02 ; H01L21/02 ; H01L21/285

Abstract:
A capacitor includes a plurality of cells each including a capacitance formation portion in which a plurality of trenches are positioned and a margin portion disposed around the capacitance formation portion. The cell includes three or more dielectric layers disposed in the capacitance formation portion and extending in the trenches, and three or more electrode layers sequentially stacked with dielectric layers interposed therebetween and extending in the trenches. At least first and second electrode layers have opposite polarities and each include a lead electrode extending from the capacitance formation portion to the margin portion. A lead electrode of the first electrode layer is disposed in a first region disposed to one side of a central portion of a cell, and a lead electrode of the second electrode layer is disposed in a second region disposed on another side of a central portion of the cell.
Public/Granted literature
- US20180350790A1 CAPACITOR Public/Granted day:2018-12-06
Information query
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