Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
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Application No.: US15934477Application Date: 2018-03-23
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Publication No.: US10381375B2Publication Date: 2019-08-13
- Inventor: Kang Sik Choi
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2017-0090337 20170717
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/45 ; H01L23/528 ; H01L29/423 ; H01L27/11582

Abstract:
A semiconductor device includes: a stack structure including horizontal conductive patterns and interlayer insulating layers, which are alternately stacked; gate patterns overlapping with both ends of the stack structure under the stack structure, the gate patterns being spaced apart from each other; and a channel pattern including vertical parts penetrating the stack structure, and a connection part disposed under the stack structure, the connection part connecting the vertical parts.
Public/Granted literature
- US20190019808A1 SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF Public/Granted day:2019-01-17
Information query
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