Invention Grant
- Patent Title: Method for manufacturing semiconductor apparatus
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Application No.: US16050580Application Date: 2018-07-31
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Publication No.: US10381398B2Publication Date: 2019-08-13
- Inventor: Linbo Shi , Fucheng Chen
- Applicant: Semiconductor Manufacturing International (Shanghai) Corporation , Semiconductor Manufacturing International (Beijing) Corporation
- Applicant Address: CN Shanghai CN Beijing
- Assignee: SEMICONDUCTOR MANUFACTURING INTL. (SHANGHAI) Corp.,SEMICONDUCTOR MANUFACTURING INTL. (BEIJING) Corp.
- Current Assignee: SEMICONDUCTOR MANUFACTURING INTL. (SHANGHAI) Corp.,SEMICONDUCTOR MANUFACTURING INTL. (BEIJING) Corp.
- Current Assignee Address: CN Shanghai CN Beijing
- Agency: Brinks Gilson & Lione
- Priority: CN201710785701 20170904
- Main IPC: H01L27/146
- IPC: H01L27/146 ; H01L21/00
Abstract:
The present disclosure relates to the field of semiconductor technologies, and discloses a method for manufacturing a semiconductor apparatus. The method includes: forming a water film on a bottom surface of a top wafer and a top surface of a bottom wafer; after the water film is formed, attaching the bottom surface of the top wafer to the top surface of the bottom wafer; disposing the attached top wafer and bottom wafer in a vacuum environment; and performing a thermal annealing process, so that the bottom surface of the top wafer is fusion-bonded to the top surface of the bottom wafer. The disclosed methods can reduce bubble voids existing between the bonded wafers.
Public/Granted literature
- US20190074323A1 METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS Public/Granted day:2019-03-07
Information query
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