Invention Grant
- Patent Title: Switch and method for fabricating the same, and resistive memory cell and electronic device, including the same
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Application No.: US15432806Application Date: 2017-02-14
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Publication No.: US10381407B2Publication Date: 2019-08-13
- Inventor: Beom Yong Kim , Soo Gil Kim
- Applicant: SK hynix Inc.
- Applicant Address: KR Icheon
- Assignee: SK hynix Inc.
- Current Assignee: SK hynix Inc.
- Current Assignee Address: KR Icheon
- Priority: KR10-2016-0074641 20160615
- Main IPC: H01G2/00
- IPC: H01G2/00 ; G11C11/28 ; H01L27/24 ; H01L45/00 ; H01L21/8238
Abstract:
A switch includes a first electrode layer, a second electrode layer disposed over the first electrode layer, and a selecting element layer interposed between the first electrode layer and the second electrode layer. The selecting element layer includes a gas region in which a current flows or does not flow according to a voltage applied to the switch. When the current flows, the switch is in an on-state, and, when the current does not flow, the switch is in an off-state.
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