Invention Grant
- Patent Title: Advanced metal insulator metal capacitor
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Application No.: US15889153Application Date: 2018-02-05
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Publication No.: US10381432B2Publication Date: 2019-08-13
- Inventor: Chih-Chao Yang
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Jeffrey S LaBaw; Steven J Meyers
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L23/522 ; H01L21/768 ; H01L21/02 ; H01L21/311 ; H01L27/08

Abstract:
A pattern is defined in a dielectric layer. The dielectric layer includes a low-k dielectric region and a high-k dielectric region. The high-k dielectric region includes a phase change material which is an alloy of tantalum and nitrogen and is a high-k insulator in a deposited state. The pattern includes a first set of features in the low-k dielectric region and a second set of features in the high-k dielectric region. A surface treatment process is performed on the phase change layer to produce a top surface layer having electrically conductive properties. A metal layer is deposited in the first and second set of features. Thus, a set of conductive lines is formed in the low-k dielectric region and a metal insulator metal capacitor in the high-k dielectric region.
Public/Granted literature
- US20180190760A1 ADVANCED METAL INSULATOR METAL CAPACITOR Public/Granted day:2018-07-05
Information query
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