Invention Grant
- Patent Title: Leakage current reduction in stacked metal-insulator-metal capacitors
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Application No.: US15926214Application Date: 2018-03-20
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Publication No.: US10381433B2Publication Date: 2019-08-13
- Inventor: Takashi Ando , Hemanth Jagannathan , Paul C. Jamison , John Rozen
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L49/02

Abstract:
Capacitors and methods of forming the same include forming an oxygenated dielectric layer on a first conductive layer. A second conductive layer is formed on the oxygenated dielectric layer. The oxygenated dielectric layer is heated to release the oxygen from the oxygenated dielectric layer and to oxidize the first and second conductive layers at interfaces between the dielectric layer and the first and second conductive layers, forming barrier layers at the interfaces.
Public/Granted literature
- US20180212018A1 LEAKAGE CURRENT REDUCTION IN STACKED METAL-INSULATOR-METAL CAPACITORS Public/Granted day:2018-07-26
Information query
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