Invention Grant
- Patent Title: Light emitting diode chip and a method for the manufacture of a light emitting diode chip
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Application No.: US15558603Application Date: 2016-03-16
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Publication No.: US10381507B2Publication Date: 2019-08-13
- Inventor: Samir Mezouari , John Whiteman
- Applicant: Plessey Semiconductors Limited
- Applicant Address: GB Plymouth
- Assignee: Plessey Semiconductors Limited
- Current Assignee: Plessey Semiconductors Limited
- Current Assignee Address: GB Plymouth
- Agency: Stinson LLP
- Priority: EP15159275 20150316
- International Application: PCT/EP2016/055638 WO 20160316
- International Announcement: WO2016/146658 WO 20160922
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/20 ; H01L33/50 ; H01L33/58 ; H01L33/04

Abstract:
A method for the manufacture of a light-emitting diode (LED) chip, the method comprising providing a first substrate; forming an LED structure on the first substrate, wherein the LED structure has a first surface adjacent the first substrate and a second surface opposite the first substrate; applying a second substrate on the second surface of the LED structure; and selectively etching the first substrate from the LED structure to form one or more walls extending from the first surface of the LED structure.
Public/Granted literature
- US20180083156A1 LIGHT EMITTING DIODE CHIP AND A METHOD FOR THE MANUFACTURE OF A LIGHT EMITTING DIODE CHIP Public/Granted day:2018-03-22
Information query
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