- Patent Title: Light emitting element with an enhanced electroluminescence effect
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Application No.: US16158856Application Date: 2018-10-12
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Publication No.: US10381508B2Publication Date: 2019-08-13
- Inventor: I-Kai Lo , Ying-Chieh Wang , Yu-Chi Hsu , Cheng-Hung Shih
- Applicant: NATIONAL SUN YAT-SEN UNIVERSITY
- Applicant Address: TW Kaohsiung
- Assignee: NATIONAL SUN YAT-SEN UNIVERSITY
- Current Assignee: NATIONAL SUN YAT-SEN UNIVERSITY
- Current Assignee Address: TW Kaohsiung
- Agency: WPAT, PC
- Priority: TW103140122A 20141119
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L33/18 ; H01L33/40 ; H01L33/24 ; H01L33/16 ; H01L33/20 ; H01L33/44 ; H01L33/32

Abstract:
This invention discloses a light emitting element to solve the problem of lattice mismatch and inequality of electron holes and electrons of the conventional light emitting elements. The light emitting element comprises a gallium nitride layer, a gallium nitride pyramid, an insulating layer, a first electrode and a second electrode. The gallium nitride pyramid contacts with the gallium nitride layer, with a c-axis of the gallium nitride layer opposite in direction to a c-axis of the gallium nitride pyramid, and with an M-plane of the gallium nitride layer parallel to an M-plane of the gallium nitride pyramid, with broken bonds at the mounting face of the gallium nitride layer and the larger end face of the gallium nitride pyramid welded with each other, with the gallium nitride layer and the gallium nitride pyramid being used as a p-type semiconductor and an n-type semiconductor respectively.
Public/Granted literature
- US20190044022A1 LIGHT EMITTING ELEMENT Public/Granted day:2019-02-07
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