Invention Grant
- Patent Title: Semiconductor light emitting device having a recess with irregularities
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Application No.: US15216402Application Date: 2016-07-21
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Publication No.: US10381516B2Publication Date: 2019-08-13
- Inventor: Yohei Wakai , Masahiko Onishi
- Applicant: NICHIA CORPORATION
- Applicant Address: JP Anan-Shi
- Assignee: NICHIA CORPORATION
- Current Assignee: NICHIA CORPORATION
- Current Assignee Address: JP Anan-Shi
- Agency: Squire Patton Boggs (US) LLP
- Priority: JP2008-241798 20080919
- Main IPC: H01L33/22
- IPC: H01L33/22 ; H01L33/20 ; H01L33/44 ; H01L33/00 ; H01L33/06 ; H01L33/14 ; H01L33/32 ; H01L33/38 ; H01L33/24 ; H01L33/58

Abstract:
A semiconductor light emitting device which includes at least one concave on a light extraction surface opposite to a surface on which a semiconductor stack comprising a light emitting layer between a n-type semiconductor layer and a p-type semiconductor layer is mounted. The concave has not less than two slopes each having a different slope angle in a direction that a diameter of the concave becomes narrower toward a bottom of the concave from an opening of the concave and a slope having a gentle slope angle is provided with irregularities and a slope having a steep slope angle is a flat surface.
Public/Granted literature
- US20160329465A1 SEMICONDUCTOR LIGHT EMITTING DEVICE Public/Granted day:2016-11-10
Information query
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