Provided is a method of manufacturing a laminated scintillator panel having a structure in which a scintillator layer and a non-scintillator layer are repeatedly laminated in a parallel direction perpendicular to incidence of radiation, characterized by including a step of joining the scintillator layer and the non-scintillator layer. The present invention provides a method of manufacturing a lattice-shaped laminated scintillator panel capable of enlarging the area and increasing the thickness with means completely different from a prior art in which a silicon wafer is used.