Invention Grant
- Patent Title: Magnetic memory device
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Application No.: US16146303Application Date: 2018-09-28
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Publication No.: US10395709B2Publication Date: 2019-08-27
- Inventor: Mariko Shimizu , Yuichi Ohsawa , Hideyuki Sugiyama , Satoshi Shirotori , Altansargai Buyandalai , Yushi Kato
- Applicant: Kabushiki Kaisha Toshiba
- Applicant Address: JP Minato-ku
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Minato-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2017-054226 20170321
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L43/08 ; H01L43/02 ; G11C11/18

Abstract:
According to one embodiment, a magnetic memory device includes a conductive layer, a first magnetic layer, a first nonmagnetic layer, a second magnetic layer, a first conductive region, a first insulating region, and a controller. The conductive layer includes a first element. The conductive layer includes a first portion, a second portion, a third portion between the first portion and the second portion, and a fourth portion between the second portion and the third portion. The first conductive region includes a second element different from the first element. The first conductive region is provided between the second magnetic layer and the third portion. The first insulating region includes a first insulating substance. The first insulating substance is an insulating compound of the second element. The controller is electrically connected to the first portion and the second portion. The controller implements a first operation and a second operation.
Public/Granted literature
- US20190035448A1 MAGNETIC MEMORY DEVICE Public/Granted day:2019-01-31
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