Invention Grant
- Patent Title: Method and apparatus for repairing memory device
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Application No.: US15699854Application Date: 2017-09-08
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Publication No.: US10395749B2Publication Date: 2019-08-27
- Inventor: Sung Ho Kang , Joo Young Kim , Kee Won Cho , Ha Young Lee , Sang Doo Kim , Hongshin Jun , Woong Hee Kim
- Applicant: SK hynix Inc. , INDUSTRY-ACADEMIC COOPERATION FOUNDATION YONSEI UNIVERSITY
- Applicant Address: KR Icheon KR Seoul
- Assignee: SK HYNIX INC.,INDUSTRY-ACADEMIC COOPERATION FOUNDATION YONSEI UNIVERSITY
- Current Assignee: SK HYNIX INC.,INDUSTRY-ACADEMIC COOPERATION FOUNDATION YONSEI UNIVERSITY
- Current Assignee Address: KR Icheon KR Seoul
- Priority: KR10-2016-0179308 20161226
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G11C29/44

Abstract:
A method of repairing a memory device may include collecting fail information on fail cells in a multi-block memory, classifying the fail cells into first and second types, and repairing the fail cells in the multi-block memory using one or more of a global spare memory, a local spare memory, and a common spare memory, based on the fail information.
Public/Granted literature
- US20180182467A1 METHOD AND APPARATUS FOR REPAIRING MEMORY DEVICE Public/Granted day:2018-06-28
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