Invention Grant
- Patent Title: Self aligned via and pillar cut for at least a self aligned double pitch
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Application No.: US15396961Application Date: 2017-01-03
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Publication No.: US10395977B2Publication Date: 2019-08-27
- Inventor: Benjamin D. Briggs , Lawrence A. Clevenger , Michael Rizzolo , Terry A. Spooner , Theodorus E. Standaert
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Alvin Borromeo
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L21/31 ; H01L21/311 ; H01L21/3105 ; H01L21/033 ; H01L23/522 ; H01L23/532
Abstract:
A method of forming via openings that includes forming sidewall spacers on a plurality of mandrels that are overlying a hardmask layer that is present on an interlevel dielectric layer. Etching the hardmask layer using a portion of the sidewall spacers and the plurality of mandrels to form a first pillar of hardmask material. The interlevel dielectric layer is etched using the first pillar of hardmask material as a mask to define a first via opening. The plurality of mandrels are removed. The hardmask layer is etched using the spacers to define a second pillar of hardmask material. The interlevel dielectric layer is etched using the second pillar of hardmask material to provide a second via opening.
Public/Granted literature
- US20170117177A1 SELF ALIGNED VIA AND PILLAR CUT FOR AT LEAST A SELF ALIGNED DOUBLE PITCH Public/Granted day:2017-04-27
Information query
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