- Patent Title: Semiconductor device and semiconductor device fabrication method
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Application No.: US15176211Application Date: 2016-06-08
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Publication No.: US10396056B2Publication Date: 2019-08-27
- Inventor: Shin Soyano
- Applicant: FUJI ELECTRIC CO., LTD.
- Applicant Address: JP Kawasaki-Shi, Kanagawa
- Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee: FUJI ELECTRIC CO., LTD.
- Current Assignee Address: JP Kawasaki-Shi, Kanagawa
- Agency: Rabin & Berdo, P.C.
- Priority: JP2015-132789 20150701
- Main IPC: H01L25/07
- IPC: H01L25/07 ; H05K1/02
Abstract:
A semiconductor device includes a printed circuit board in a peripheral portion of a housing portion of a case in which a laminated substrate is housed. A terminal block holding control terminals from which control signals are outputted to the printed circuit board is disposed over the printed circuit board. A gate electrode of a semiconductor chip and the printed circuit board are electrically connected by a wire.
Public/Granted literature
- US20170006721A1 SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE FABRICATION METHOD Public/Granted day:2017-01-05
Information query
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