Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
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Application No.: US15700193Application Date: 2017-09-11
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Publication No.: US10396204B2Publication Date: 2019-08-27
- Inventor: Che-Wei Chang , Chun-Hsiung Wang , Chih-Wei Chen
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Priority: TW105129704A 20160913
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/66
Abstract:
A semiconductor device includes: a gate structure extending along a first direction on a substrate, in which the gate structure includes a first edge and a second edge extending along the first direction; a first doped region adjacent to one side of the gate structure, in which the first doped region includes a third edge and a fourth edge extending along the first direction; a second doped region adjacent to another side of the gate structure, in which the second doped region comprises a fifth edge and a sixth edge extending along the first direction; a first fin-shaped structure extending from the second edge of the gate structure toward the third edge of the first doped region; and a second fin-shaped structure extending from the first edge of the gate structure toward the sixth edge of the second doped region.
Public/Granted literature
- US20180076327A1 SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME Public/Granted day:2018-03-15
Information query
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