Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15178817Application Date: 2016-06-10
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Publication No.: US10396802B2Publication Date: 2019-08-27
- Inventor: Mitsuhiko Igarashi , Kan Takeuchi , Takeshi Okagaki
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2015-155857 20150806
- Main IPC: H03L1/00
- IPC: H03L1/00 ; H03K3/03 ; G11C29/02 ; G01R31/3185 ; G01R31/26 ; G06F11/34 ; H03L7/099 ; G01R31/27 ; H03K3/011 ; H01L21/822 ; H03B1/02 ; G06F11/07 ; G06F11/00

Abstract:
In order to provide a semiconductor device capable of detecting HCI degradation of a semiconductor element in a simple structure, the semiconductor device includes an oscillation circuit including a plurality of logic gates of various driving forces which are formed by transistors and coupled in series, a frequency counter that measures an oscillation frequency of the oscillation circuit, and a comparator that compares the oscillation frequency of the oscillation circuit measured by the frequency counter with a predetermined value.
Public/Granted literature
- US20170038426A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-02-09
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