Invention Grant
- Patent Title: Substrate handling contacts and methods
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Application No.: US15601079Application Date: 2017-05-22
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Publication No.: US10399231B2Publication Date: 2019-09-03
- Inventor: You-Hua Chou , Kuo-Sheng Chuang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: B25J11/00
- IPC: B25J11/00 ; H01L21/687 ; H01L21/677

Abstract:
A substrate handling device includes a substrate reception area defined by an edge. The substrate reception area includes a planar surface and a plurality of contact structures. At least one contact structure of the plurality of contact structures is located at the edge and at least one contact structure of the plurality of contact structures is located on the planar surface. The substrate reception area and planar surface are made of a first material. Each contact structure of the plurality of contact structures includes a second material different from the first material, the second material having a hardness aligned to a hardness of a substrate material.
Public/Granted literature
- US20180337078A1 SUBSTRATE HANDLING CONTACTS AND METHODS Public/Granted day:2018-11-22
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