- Patent Title: Agglomerated boron nitride particles, composition containing said particles, and three- dimensional integrated circuit having layer comprising said composition
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Application No.: US15667246Application Date: 2017-08-02
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Publication No.: US10400151B2Publication Date: 2019-09-03
- Inventor: Masanori Yamazaki , Mari Abe , Tomohide Murase , Yasuhiro Kawase , Makoto Ikemoto , Hideki Kiritani , Yasunori Matsushita
- Applicant: Mitsubishi Chemical Corporation
- Applicant Address: JP Chiyoda-ku
- Assignee: Mitsubishi Chemical Corporation
- Current Assignee: Mitsubishi Chemical Corporation
- Current Assignee Address: JP Chiyoda-ku
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2011-260238 20111129; JP2012-103216 20120427; JP2012-103217 20120427
- Main IPC: C09K5/14
- IPC: C09K5/14 ; C08G59/40 ; C01B21/064 ; H01L27/04 ; C08L63/00 ; C01B35/14 ; H01L23/00 ; H01L21/77 ; C08K3/38

Abstract:
To provide a composition for a three-dimensional integrated circuit capable of forming a filling interlayer excellent in thermal conductivity also in a thickness direction, using agglomerated boron nitride particles excellent in the isotropy of thermal conductivity, disintegration resistance and kneading property with a resin. A composition for a three-dimensional integrated circuit, comprising agglomerated boron nitride particles which have a specific surface area of at least 10 m2/g, the surface of which is constituted by boron nitride primary particles having an average particle size of at least 0.05 μm and at most 1 μm, and which are spherical, and a resin (A) having a melt viscosity at 120° C. of at most 100 Pa·s.
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