Invention Grant
- Patent Title: Process for the preparation of polycrystalline silicon
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Application No.: US14785918Application Date: 2014-03-24
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Publication No.: US10400329B2Publication Date: 2019-09-03
- Inventor: Michael Kerscher , Reiner Pech , Armin Sandner
- Applicant: WACKER CHEMIE AG
- Applicant Address: DE Munich
- Assignee: WACKER CHEMIE AG
- Current Assignee: WACKER CHEMIE AG
- Current Assignee Address: DE Munich
- Agency: Brooks Kushman P.C.
- Priority: DE102013207251 20130422
- International Application: PCT/EP2014/055837 WO 20140324
- International Announcement: WO2014/173596 WO 20141030
- Main IPC: B02C23/08
- IPC: B02C23/08 ; C23C16/24 ; C01B33/035 ; C23C16/01 ; G01N29/09 ; C23C16/56 ; H01L31/028 ; H01L31/0368

Abstract:
Siemens reactors for polysilicon deposition may employ faster and/or more economical deposition conditions without reduction in yield, by pre-sorting polysilicon rods into different quality classifications prior to comminution, and further sorting the polysilicon fragments in each classification into further classifications.
Public/Granted literature
- US20160068949A1 PROCESS FOR THE PREPARATION OF POLYCRYSTALLINE SILICON Public/Granted day:2016-03-10
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