Invention Grant
- Patent Title: Method for manufacturing metal chalcogenide thin film and thin film manufactured thereby
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Application No.: US15120238Application Date: 2015-02-10
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Publication No.: US10400331B2Publication Date: 2019-09-03
- Inventor: Minseok Choi , Changgu Lee , Youngchan Kim
- Applicant: LG ELECTRONICS INC. , RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
- Applicant Address: KR Seoul KR Suwon-si, Gyeonggi-do
- Assignee: LG ELECTRONICS INC.,RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
- Current Assignee: LG ELECTRONICS INC.,RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY
- Current Assignee Address: KR Seoul KR Suwon-si, Gyeonggi-do
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Priority: KR10-2014-0020276 20140221
- International Application: PCT/KR2015/001328 WO 20150210
- International Announcement: WO2015/126087 WO 20150827
- Main IPC: C23C16/30
- IPC: C23C16/30 ; C23C14/00 ; C23C14/06 ; C23C14/22 ; C23C16/46
Abstract:
The present invention relates to the manufacturing of a heteroelement thin film, and particularly to a method for manufacturing a metal chalcogenide thin film and the thin film manufactured thereby. The present invention, which relates to a method for manufacturing a metal chalcogenide thin film, may comprise the steps of: supplying a vaporized metal precursor; supplying a chalcogen-containing gas; and forming a thin film by reacting the metal precursor with the chalcogen-containing gas on a growth substrate at a first temperature condition.
Public/Granted literature
- US20170073809A1 METHOD FOR MANUFACTURING METAL CHALCOGENIDE THIN FILM AND THIN FILM MANUFACTURED THEREBY Public/Granted day:2017-03-16
Information query
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