Invention Grant
- Patent Title: Scanning ferromagnetic resonance (FMR) for wafer-level characterization of magnetic films and multilayers
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Application No.: US15463074Application Date: 2017-03-20
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Publication No.: US10401464B2Publication Date: 2019-09-03
- Inventor: Santiago Serrano Guisan , Luc Thomas , Son Le , Guenole Jan
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: G01R31/02
- IPC: G01R31/02 ; G01R33/60 ; G01R33/345 ; G01R31/3185 ; H01P5/18 ; H01L43/08 ; H01L43/10 ; G01N24/10 ; G01R33/30

Abstract:
A ferromagnetic resonance (FMR) measurement system is disclosed with a waveguide transmission line (WGTL) connected at both ends to a mounting plate having an opening through which the WGTL is suspended. While the WGTL bottom surface contacts a portion of magnetic film on a whole wafer, a plurality of microwave frequencies is sequentially transmitted through the WGTL. Simultaneously, a magnetic field is applied to the contacted region thereby causing a FMR condition in the magnetic film. After RF output is transmitted through or reflected from the WGTL to a RF detector and converted to a voltage signal, effective anisotropy field, linewidth, damping coefficient, and/or inhomogeneous broadening are determined based on magnetic field intensity, microwave frequency and voltage output. A plurality of measurements is performed by controllably moving the WGTL or wafer and repeating the simultaneous application of microwave frequencies and magnetic field at additional preprogrammed locations on the magnetic film.
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