Invention Grant
- Patent Title: Gate driver on array circuit based on low temperature poly-silicon semiconductor thin film transistor
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Application No.: US15312040Application Date: 2016-06-13
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Publication No.: US10403219B2Publication Date: 2019-09-03
- Inventor: Yafeng Li
- Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.
- Applicant Address: CN Wuhan, Hubei
- Assignee: Wuhan China Star Optoelectronics Technology Co., Ltd.
- Current Assignee: Wuhan China Star Optoelectronics Technology Co., Ltd.
- Current Assignee Address: CN Wuhan, Hubei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Priority: CN201610331196 20160518
- International Application: PCT/CN2016/085598 WO 20160613
- International Announcement: WO2017/197684 WO 20171123
- Main IPC: G09G3/36
- IPC: G09G3/36 ; G02F1/1368 ; G02F1/1345 ; H01L27/12 ; G02F1/1362 ; H01L29/786

Abstract:
The present disclosure proposes a GOA circuit having GOA units connected in a serial. Each GOA unit includes a scan-control module, an output module, a pull-down module, and an output adjusting module. By using the output adjusting module formed by a ninth TFT, a tenth TFT, an eleventh TFT, and a twelfth TFT, the voltage level of a fourth node transits between the high voltage level and the low voltage level with the second clock signal in either forward scanning or backward scanning. Compared with the conventional technology where the high and low voltage levels of the output terminal are mainly realized using the second TFT, the GOA circuit realizes that the output ability of the output terminal enhances and the charging capacity of in-plane pixels upgrades in the same period of time to improve the display effect of the liquid crystal panel.
Public/Granted literature
- US20180108316A1 GATE DRIVER ON ARRAY CIRCUIT BASED ON LOW TEMPERATURE POLY-SILICON SEMICONDUCTOR THIN FILM TRANSISTOR Public/Granted day:2018-04-19
Information query
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